Product Datasheet Search Results:

2SJ216.pdf5 Pages, 20 KB, Original
2SJ216.pdf1 Pages, 111 KB, Scan
2SJ216
N/a
Shortform IC and Component Datasheets (Plus Cross Reference Data)
2SJ216.pdf5 Pages, 22 KB, Original
2SJ216
Renesas Electronics
35 A, 60 V, 0.09 ohm, P-CHANNEL, Si, POWER, MOSFET
2SJ216-E.pdf5 Pages, 22 KB, Original
2SJ216-E
Renesas Electronics
35 A, 60 V, 0.09 ohm, P-CHANNEL, Si, POWER, MOSFET

Product Details Search Results:

Hitachi.co.jp/2SJ216
{"C(iss) Max. (F)":"2400p","Absolute Max. Power Diss. (W)":"50","@Pulse Width (s) (Condition)":"10u","g(fs) Max, (S) Trans. conduct,":"18","@V(GS) (V) (Test Condition)":"4","t(d)off Max. (s) Off time":"461n","r(DS)on Max. (Ohms)":"90m","@V(DS) (V) (Test Condition)":"10","I(DM) Max (A)(@25°C)":"140","I(GSS) Max. (A)":"10u","g(fs) Min. (S) Trans. conduct.":"11","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"18","@Freq. (Hz) (Test Condition)":"1M","V(GS)th Max. (V)":"2.0","@(VDS) (V) (Test Condition)":...
1313 Bytes - 04:38:33, 15 October 2025
Renesas.com/2SJ216
{"Terminal Finish":"TIN LEAD","Terminal Form":"THROUGH-HOLE","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"35 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0900 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"140 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"60 V","Tran...
1432 Bytes - 04:38:33, 15 October 2025
Renesas.com/2SJ216-E
{"Terminal Finish":"TIN COPPER","Terminal Form":"THROUGH-HOLE","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"35 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0900 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"140 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICOND...
1491 Bytes - 04:38:33, 15 October 2025

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